Characterization of Infrared Optical Properties of Layered Semiconductors.

Abstract

The techniques of infrared wavelength modulation and the techniques of photo-induced-transients-spectroscopy were used to study the electronic structure and lattice dynamics of semiconductors. These studies have included: (1) the assessment of homogeneity of doping and strain in layer semiconductors; (2) the electronic structure of deep levels by wavelength modulation; and (3) study of deep levels by photoinduced transients spectroscopy. The present work was primarily directed toward GaAs and Si. (Author)

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Document Details

Document Type
Technical Report
Publication Date
Mar 20, 1982
Accession Number
ADA117729

Entities

People

  • Rubin Braunstein

Organizations

  • University of California, Los Angeles

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Absorption Coefficients
  • Air Force
  • Band Gaps
  • Band Structures
  • Brillouin Scattering
  • Coefficients
  • Compound Semiconductors
  • Crystal Lattices
  • Energy
  • Energy Bands
  • Field Effect Transistors
  • Lattice Dynamics
  • Light Pulses
  • Measurement
  • Optical Properties
  • Scattering
  • Semiconductors

Fields of Study

  • Materials science

Readers

  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene