Growth of HgCdTe by Modified Molecular Beam Epitaxy
Abstract
Films of Hgl-xCdxTe and ZnO can be formed by the LADA technique. Their results will be presented separately. HgO.7CdO.3Te films have specular surface morphology and sharp interfaces with a cross diffusion region of 1500 A. Electron mobility at 77K as high as 19,000 sq cm/V-s was observed. SIMS profile analysis indicated large accumulation of impurities at the interface and near the surface, MIS devices were fabricated and their results will be presented. ZnO films can be formed by evaporating from ZnO powder pellets with a pulsed carbon dioxide laser (lambda =10.6 micrometers). Films from 0.1 to 1.0 micrometers thick were deposited on various substrates in a wide range of temperatures. At substrate temperatures above 250 C, the deposited films are colorless and transparent. The surface is smooth with no discernable features, even under 1000x magnification. The films are highly oriented along the C-axis. X-ray diffraction patterns indicate a single (0001) peak with a half width (2 theta) about 0.3-0.35 degrees. This is comparable to the ZnO films deposited by the state-of-the-art magnetron sputtering technique.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jun 15, 1982
- Accession Number
- ADA117752
Entities
People
- J. T. Cheung