Radiation Damage and Annealing Effects Studies of Silicon-Implanted Gallium Arsenide.

Abstract

Radiation damage and low temperature (200 degrees-600 degrees C) annealing behavior of 120 keV silicon and selenium ion implants into gallium arsenide have been investigated by Rutherford Backscattering-Channeling and Transmission Electron Microscopy techniques. Lattice location studies of Si implants after high temperature annealing (850 degrees and 950 degrees C) have been conducted using Proton Induced X-Ray Emission method. (Author)

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Document Details

Document Type
Technical Report
Publication Date
Mar 31, 1982
Accession Number
ADA117884

Entities

People

  • Samuel C. Ling

Organizations

  • Wright State University

Tags

Communities of Interest

  • Advanced Electronics
  • Materials and Manufacturing Processes

DTIC Thesaurus Topics

  • Air Force
  • Crystal Lattices
  • Crystals
  • Electron Microscopy
  • Elements
  • Gallium Arsenides
  • High Temperature
  • Implantation
  • Ion Implantation
  • Low Temperature
  • Microscopy
  • Physics
  • Radiation
  • Semiconductor Devices
  • Transmission Electron Microscopy
  • Universities
  • X Rays

Fields of Study

  • Physics

Readers

  • Nuclear and Radiation Engineering.
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics