Ion-Beam Milling of Silicon Carbide Epitaxial Layers.

Abstract

Ion milling of photolithographically processed silicon carbide heteroepitaxially grown layers on Si is feasible using an aluminum mask which is produced by standard photolithographic procedures and techniques. (Author)

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Document Details

Document Type
Technical Report
Publication Date
Aug 04, 1982
Accession Number
ADA118010

Entities

People

  • H. H. Wieder

Organizations

  • University of California

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Aluminum
  • California
  • Ceramic Materials
  • Compound Semiconductors
  • Computer Science
  • Electrical Engineering
  • Electronics
  • Engineering
  • Ion Beams
  • Materials
  • Measurement
  • Metal-Semiconductor Junctions
  • Metals
  • Semiconductors
  • Silicon Carbide
  • Standards
  • Universities

Readers

  • Nanofabrication and Microfabrication.
  • Semiconductor Device Technology