Optical Electronics and Infrared Radiation.
Abstract
The work has progressed in several fronts. Following extensive previous work at the laboratory, properties of metal-barrier-metal submicron junctions have been explored, with respect to their high-speed responses, frequently mixing characterists, and the physical mechanisms accuring in the junction. The studies are done at cryogenic temperatures and relate to the properties of the mechanically contacted junctions, as well as thin film evaporated junctions. Emphasis is placed on high-speed features originating from rapid variation of the I-V characteristics over narrow ranges of bias voltages, causing sharp enhancements of the junctions IR responses at fixed bias fields. The model employed in the interpretation of the results is based on Fermi-level modulation by the applied high frequency field, determining the high speed current conduction properties of the junctions. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Aug 09, 1982
- Accession Number
- ADA118319
Entities
People
- Ali Javan
Organizations
- Massachusetts Institute of Technology