Single Crystal Epitaxy and Characterization of Beta-SiC.
Abstract
Epitaxial thin films of beta-SiC of up to five microns in thickness have been reproducibly grown on (100) and (111) Si single crystal wafers. A two-step process involving the initial chemical conversion of the Si surface to SiC using C2H4 alone followed by direct CVD of SiC using both SiH4 and C2H4 was employed to achieve this objective. Theoretical CVD phase diagrams for the Si-C-H and Si-C-Ar system have been calculated for various reactive gases, Si/Si+C ratios, temperatures and total pressures. Amorphous Sic has also been produced using a remodeled rf sputtering unit. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Jul 01, 1982
- Accession Number
- ADA118800
Entities
People
- Robert F Davis
Organizations
- North Carolina State University