MNOS/SOS Radiation Hardness Performance and Reliability Study.
Abstract
In this investigation the endurance-retention characteristics of fast-write MNOS memory structure, and radiation tolerance of metal-gate dual-dielectric and polysilicon-gate all-oxide devices have been evaluated. Writing and clearing speed have been studied with respect to the NH3:SiH4 ratio (APCVD), and NH3:SiC12H2 ratio (LPCVD). The films deposited with a low NH3:SiC12 ratios could be written and cleared with shorter pulse widths; however, a degradation in retention was observed. An improvement in the endurance retention product of a drain source protected transistor structure has been realized by oxidizing the memory nitride followed by an H2 anneal immediately after deposition. The film was deposited with a LPCVD reactor at 750 deg with a NH3:SiC12H2 ratio of 9:1. Oxidation was performed in steam at 900 C, as was the subsequent H2 anneal. The effect of total dose radiation was found to be more severe for a positive bias. The all oxide polysilicon gate transistor structures were observed to be relatively soft, however results from capacitor structures shows promise in developing a radiation tolerant polysilicon-gate all-oxide gate structure. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- May 01, 1982
- Accession Number
- ADA118864
Entities
People
- F. L. Hampton
- J. R. Cricchi