Investigation of Impurity Concentration and Electrical Properties Near Interfaces.

Abstract

The problem of thermal conversation in semi-insulating gallium arsenide was examined using cathodoluminescence, photo-luminescence and secondary ion mass spectrometry. The results indicated that a key role is played by the formation of Si(as)-V(ga) complexes. (Author)

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Document Details

Document Type
Technical Report
Publication Date
Apr 08, 1982
Accession Number
ADA119189

Entities

People

  • D. B. Wittry

Organizations

  • University of Southern California

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Band Gaps
  • Electrical Properties
  • Electron Beams
  • Electronics Laboratories
  • Electrons
  • Energy Bands
  • Epitaxial Growth
  • Gallium Arsenides
  • Heat Treatment
  • Laser Diodes
  • Mass Spectrometry
  • Materials
  • Materials Science
  • Measurement
  • Spectra
  • Spectrometers
  • Spectrometry

Readers

  • Semiconductor Device Technology
  • Team-Based Human-Centered Cognitive Task Decision Making and Information Performance.

Technology Areas

  • Microelectronics