Optical Properties of Small Band Gap Semiconductors Subject to Laser Excitation. Nonlinear Infrared Properties of Semiconductors.
Abstract
A theoretical and experimental study of the optical properties of small band gap semiconductors subject to laser excitation and the nonlinear infrared properties of small band gap semiconductors subject to laser excitation and the nonlinear infrared properties of semiconductors has been carried out. These studies have led to an understanding of the nonradiative recombination mechanisms due to impurities via an Auger process. Predictions about the role of radiative and nonradiative processes in narrow band gap semiconductors have been made. Experiments performed on HgCdTe alloys with different composition provided the first systematic study of photoluminescence in these alloys and gave data that supported the conclusions on the relative importance of radiative and nonradiative processes in alloys. The study of the nonlinear infrared properties in the semiconductors resulted in the first complete theory of the phenomenon. Experiments to measure the role of impurities on the saturation intensity have given results in good agreement with theory. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Jan 01, 1982
- Accession Number
- ADA119264
Entities
People
- David L. Smith
- T. C. Mcgill
Organizations
- California Institute of Technology