Electronic Processes in InP and Related Compounds.

Abstract

The growth and characterization of high-purity epitaxial layers grown by liquid-phase-epitaxy (LPE) are described. Chemical and electrical evaluation of the layers indicate that silicon and sulfur are the dominant residual donors in LPE-grown InP layes. Techniques for controlling these dopants are discussed. The current-voltage characteristics of Schottky diodes on p-InP are analyzed. Aluminum, silver, and gold were tried as Schottky-barrier metals. The results reported here demonstrate that Al is the best choice as the Schottky metal. An automated system has been used to measure the relative photoresponse from Schottky diodes. Photocurrent measurements due to pure electron and pure hole injection have been made as a function of bias applied to the sample. This data has been analyzed to yield ionization coefficients of electrons (alpha) and holes (beta) in InP. The results clearly demonstrate that holes have a larger ionization coefficient than electrons in InP. (Author)

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Document Details

Document Type
Technical Report
Publication Date
Jul 01, 1982
Accession Number
ADA119534

Entities

People

  • C. L. Anderson
  • G. S. Kamath
  • H. L. Dunlap
  • K. V. Vaidyanathan

Organizations

  • HRL Laboratories

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Avalanche Photodiodes
  • Control Systems
  • Electrical Engineering
  • Electronics
  • Electronics Laboratories
  • Epitaxial Growth
  • Liquid Phase Epitaxy
  • Liquid Phases
  • Mass Spectrometry
  • Metal-Semiconductor Junctions
  • Military Research
  • Power Electronics
  • Schottky Diodes
  • Semiconductors
  • Spectra
  • Spectrometry
  • Spectroscopy

Fields of Study

  • Materials science

Readers

  • Materials Science and Engineering.
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics