Secondary Ion Mass Spectrometric Image Depth Profile Analysis of Thin Layers.
Abstract
Image depth profiling is applied to the quantitative analysis of molecular beam epitaxially grown gallium arsenide thin layers. The technique involves the use of ion implantation through a mask and subsequent analysis by secondary ion mass spectrometry (SIMS). The proposed approach provides high accuracy results in the analysis of semiconductor thin layers. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Sep 22, 1982
- Accession Number
- ADA119647
Entities
People
- George H. Morrison
- P. K. Chu
- William C. Harris Jr
Organizations
- Cornell University Department of Chemistry and Chemical Biology