GaAs Monolithic Microwave Subsystem Technology Base.

Abstract

During this reporting period, the effort was primarily aimed at developing a number of technologies critical to the development of a 3-W, 8-12 GHz amplifier. These technologies included 1) vias, 2) air bridges, 3) deep UV photolithography for 0.7 micrometer gates, 4) overlay capacitors. In the circuit area, 'cell cluster' matching techniques were demonstrated in a hybrid combiner circuit and several monolithic two-stage amplifier were evaluated. A 5-10 GHz amplifier run incorporating vias and airbridges, was measured and produced 1 watt output from equal 5.5-9.0 GHz with 9 dB associated gain. An 8-12 GHz, two-stage amplifier was also designed using 1 micrometer gate length FETs. While these FETs were not optimum for 12-GHz operation, this amplifier was predicted and measured to have a power output of 400-500 mW with 7 dB associated gain over the 8-12 GHz range. (Author)

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Document Details

Document Type
Technical Report
Publication Date
Mar 01, 1982
Accession Number
ADA120091

Entities

People

  • J. E. Degenford
  • M. C. Driver
  • R. G. Freitag

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Amplifiers
  • Bandwidth
  • Chemistry
  • Databases
  • Deep Ultraviolet Lithography
  • Dielectric Films
  • Dielectrics
  • Fabrication
  • Field Effect Transistors
  • Glass Transition Temperature
  • Integrated Circuits
  • Materials
  • Measurement
  • Photolithography
  • Power Amplifiers
  • Semiconductors
  • Statistical Analysis

Readers

  • Electronics Engineering
  • Integrated Circuit Design and Technology.