Neutralization of Ions at an Electronically-Excited Semiconductor Surface.
Abstract
Neutralization of positive ions colliding with a semiconductor surface is studied. It is shown that the neutralization probability can be significantly enhanced if the surface exposed to the impinging ions is electronically excited. The basic reason behind this is that the impinging ions have easier access to the excited surface electrons than to bulk electrons. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Sep 01, 1982
- Accession Number
- ADA120258
Entities
People
- Hai-woong Lee
- Thomas F. George
- William C. Murphy
Organizations
- University of Rochester