A DoD/DESAT Phase I Final Report,
Abstract
The purpose of this Phase I research program was to determine the ability of combining carefully planned crystal growth experiments with surface sensitive spectroscopies to elucidate fundamental phenomena in semiconductor crystal growth methods. This study has employed high performance secondary ion mass spectrometry (SIMS) and other surface sensitive spectroscopies such as scanning electron microscopy (SEM), Auger electron spectroscopy (AES), and energy dispersive X-ray spectrometry (EDS) in the study of thin crystalline films grown by organometallic vapor phase epitaxy (OMVPE), molecular beam epitaxy (MBE), and liquid phase epitaxy (LPE) processes. The ultimate goal of this research is to provide insight into the mechanisms involved in these crystal growth methods. Studies have also employed a new rapid isothermal annealing system for the solid phase crystal regrowth of ion implanted silicon.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jun 30, 1982
- Accession Number
- ADA120341
Entities
People
- Charles A. Evans Jr.
- Charles J. Hitzman