Electrooptical Devices.
Abstract
GaInAsP/InP lasers with highly uniform and reproducible threshold characteristics have been fabricated by careful control of layer thickness and morphology. Reduced threshold current densities of 4 to 5 kA/cm2-micrometer were routinely achieved for a wide range of active layer thicknesses. Broad-area Be-implanted GaInAsP/InP laser diodes have been fabricated. The best results have been obtained using Be implanted and annealed under conditions which minimize diffusion of the implanted ions. Reduced threshold current densities averaging 6 to 7 kA/cm2-micrometer and as low as 4.2 kA/cm2-micrometer have been measured and are comparable with those of conventional laser structures. Precise control over the thickness and doping of the InP cap layer is required to achieve reproducible results. A technique has been developed to monolithically integrate a passive waveguide with a GaInAsP/InP double-heterostructure laser for potential use in fabricating modulators and integrated external cavities. Initial tests of broad-area lasers with 350-micrometer passive waveguide sections showed threshold current densities of 2.4 to 3.1 kA/cm2.
Document Details
- Document Type
- Technical Report
- Publication Date
- Sep 30, 1981
- Accession Number
- ADA120428
Entities
People
- Charles E. Hurwitz
Organizations
- Massachusetts Institute of Technology