VPE Growth of InP for Electronic Devices.

Abstract

A double dilution reactor for InP growth is described and problems concerning the fabrication of Schottky diodes and MIS contacts on InP are addressed. Device grade material has been obtained from this system.

Open PDF

Document Details

Document Type
Technical Report
Publication Date
May 01, 1982
Accession Number
ADA120551

Entities

People

  • F. J. Rosenbaum
  • J. M. Bornholdt
  • R. E. Goldwasser

Organizations

  • University of Washington

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Chemical Reactions
  • Construction
  • Electrical Properties
  • Electronics Laboratories
  • Energy Bands
  • Energy Levels
  • Epitaxial Growth
  • Fabrication
  • Heat Energy
  • Heat Treatment
  • Materials
  • Metal-Semiconductor Junctions
  • Methanols
  • Modules (Electronics)
  • Semiconductors
  • Stratified Fluids
  • Temperature Gradients

Fields of Study

  • Materials science

Readers

  • Metallurgy
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene
  • Microelectronics - Microelectromechanical Systems