New X-Level Detectors.
Abstract
The objectives of this program were to determine the feasibility of using the In-X center in silicon as the active level in a photoconductive device for the 8-14 micron atmospheric window and to clarify the role, if any, which aluminum plays in the formation of the In-X defect. Most evidence points to the In-X center being an indium-carbon complex which shows a mass-action type behavior but there is some speculation that In and Al constitute the defect and that carbon stabilizes this association. To utilize the In-X level in an efficient photoconductive device requires concentration of the In-X defect in the 5-10 x 10 to the 16th power cm-3 range. To achieve these concentrations, near maximum concentrations of indium and carbon in silicon are required. The gradient transport solution growth method of crystal growth was adopted to dope the silicon with near maximum amounts of In and C. Material from Si(In,C) growth runs were then subjected to a variety of low temperature heat treatments (<600C) to study the reaction kinetics of the In-X center. This was done to determine if suitable concentrations of In-X could be obtained in reasonable annealing times. It was found that, contrary to the mass action law, the concentrations of In-X centers decreased with increased annealing times.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jan 01, 1982
- Accession Number
- ADA120788
Entities
People
- David Arch
Organizations
- Honeywell International, Inc.