Low Pressure Synthesis of Indium Phosphide,
Abstract
Polycrystalline large grain ingots of indium phosphide have been synthesized using the direct reaction technique. Indium phosphide has been grown under various phosphorus pressures (3 to 30 atm). Several temperature profiles were used to study the effect of temperature on mobility, carrier concentrations, grain size, homogeneity, and stoichiometry. Quartz and pyrolytic boron nitride boats are used. Several experiments were performed placing the PBN and quartz boats inside boron nitride and aluminum oxide tubes in an attempt to lower the silicon contamination. Data are presented. showing the results of different profiles, phosphorus pressures, and boat-tube materials. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Apr 01, 1982
- Accession Number
- ADA120855
Entities
People
- Joseph A. Adamski
Organizations
- Rome Laboratory