Growth of InP by Molecular Beam Epitaxy.

Abstract

Indium Phosphide MBE layers have been grown using a number of different phosphorus sources. Sources that produce a significant flux of P2 or atomic phosphorus yield much higher quality epitaxial films than sources which are predominantly P4. The best materials grown to date had room temperature mobilities greater than 3700 sq cm/V-ls-l and were grown using a small Inp phosphorus source. The geometry of the Inp phosphorus source is important. An incorrect choice can produce a source that produces predominately the P4 molecular species rather than the desired P2. (Author)

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Document Details

Document Type
Technical Report
Publication Date
Feb 28, 1982
Accession Number
ADA120876

Entities

People

  • Earl L. Meeks
  • Fred L. Eisele

Organizations

  • Georgia Tech

Tags

Communities of Interest

  • Advanced Electronics
  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Ceramic Materials
  • Compound Semiconductors
  • Electron Diffraction
  • Epitaxial Growth
  • Field Effect Transistors
  • Liquid Phase Epitaxy
  • Liquid Phases
  • Low Temperature
  • Mass Spectrometers
  • Materials
  • Measurement
  • Metal-Semiconductor Junctions
  • Molecular Beam Epitaxy
  • Molecular Beams
  • Organophosphorus Compounds
  • Semiconductors
  • Vacuum

Fields of Study

  • Materials science

Readers

  • Materials Science and Engineering.
  • Mathematics or Statistics
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.