Hot-Electron Injection into GaAs and Related Materials.
Abstract
We have investigated a wide array of phenomena involving chalcogenide glasses, amorphous silicon alloys, and III-V semiconductors. We began with a study of chalcogenide-glass/GaAs heterojunctions, finding an accumulation region near the anode of the GaAs which pins the field below threshold in forward bias; in reverse bias, a depletion region is induced near the cathode of the GaAs. Similar results were found for InP heterojunctions. A model was developed for threshold switching in chalcogenides, including the mechanism for the switching and recovery events and the nature of the ON-state. A narrow-band electroluminescence was detected at room temperature during the pulsed ON-state, and evidence for its coherence was found. Thin-film transistors were fabricated using a chalcogenide glass as the active material resulted in a microfilm product of approximately 2 sq cm/V-s, more than a factor of 10 to the 6th power greater than those previously reported. The field effect was found to be transient and a detailed model was developed. The effect is controlled by a potential barrier which retards netrual defect interconversion. Similar results were invoked to explain the Staebler-Wronski effect in amorphous silicon alloys and fatigue in MNOS transistors. Finally, switching in amorphous silicon alloys was investigated in detail. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Oct 05, 1982
- Accession Number
- ADA120941
Entities
People
- David Adler
Organizations
- Massachusetts Institute of Technology