HgCdTe Surface Study Program.
Abstract
Electronic structure of the HgCdTe bulk and surface regions as well as passivated interfaces has been studied using a variety of techniques. Capacitance-voltage (C-V) and deep level transient spectroscopy (DLTS) has been used to probe interface states in MIS devices formed with anodic oxides or SiO2. Ellipsometry was sued to monitor the effects of surface treatments. Results indicate the final structure is principally due to prepassivation processing through its effect on surface oxidation. These treatments are seen to effect electronic activity thousands of Angstroms below the interface. Photoemission spectroscopy was used to probe bulk band structure and indicates a fundamental difference in bonding of Cd and Hg to the lattice. A breakdown of the virtual crystal approximation is noted and an improved computation for this alloy discussed. Oxygen chemistry was also studied using PS which indicates that the natural oxide formed on exposure to excited oxygen does not contain Hg. Differences in oxidation between HgCdTe and HgTe indicate Cd plays a key role in the oxidation. Auger electron spectroscopy coupled with ion sputtering (AES-sputter profiting) has been used to ivnestigate the anodic oxide interface. A small amount of Hg is detected in the oxide while no Hg depletion in the alloy due to anodization is seen. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Mar 01, 1982
- Accession Number
- ADA121115
Entities
People
- Jerry A. Wilson
- Joel Silberman
- Per Morgen
- W. E. Spicer