Mercury Cadmium Telluride Sputtering Research.
Abstract
A large number of 10 micron thick Mercury Cadmium Telluride films with 20 mole percent CdTe wer triode-sputtered on silicon substrates. The sensitivity of carrier concentration and electron mobility to small changes in sputtering parameters (particularly Hg sputtering gas pressure and substrate d.c. bias and temperature) and to post-deposition annealing parameters was studied. Carrier concentrations of ten to the fifteenth per cubic cm at one hundred degrees Kelvin were obtained in n-type films after annealing at 553 degrees Kelvin. Substrate bias, which removes impurities during sputter-deposition, was found essential to obtaining n-type films. Electron mobilities were only 10 percent of bulk crystal values but should improve with finer tuning of deposition and annealing parameters. By Wavelength Dispersive Electron Probe Microanalysis and optical absorption analysis, it was shown that the composition of films with 0.2 to 0.27 mole percent CdTe could be the same as the effective x value of the targets, which were made from a pressed powder mixture of HgTe and CdTe.
Document Details
- Document Type
- Technical Report
- Publication Date
- Aug 28, 1982
- Accession Number
- ADA121242
Entities
People
- Roy H. Cornely
Organizations
- New Jersey Institute of Technology