Determination of Oxygen and Carbon in Silicon Wafers,

Abstract

Possibilities for the use of a dispersive infrared spectrophotometer to determine the oxygen and carbon content of device quality silicon wafers have been examined. A novel approach to the analysis of the spectra bassed on a curve fitting method has been employed. This has been shown to provide very good rejection of interferences due to absorptions caused by precipitates present in heat treated material. Single instrument precisions for measurements on 350 micrometers device quality wafers of better than 10% for oxygen and + or - 2 x 10 to the 16th power/cc for carbon with no correction for wafer backsurface finish are reported. (Author)

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Document Details

Document Type
Technical Report
Publication Date
Aug 01, 1982
Accession Number
ADA121376

Entities

People

  • R. W. Series

Organizations

  • Royal Signals and Radar Establishment

Tags

DTIC Thesaurus Topics

  • Absorption
  • Accuracy
  • Base Lines
  • Curve Fitting
  • Errors
  • Geometry
  • Infrared Spectrophotometers
  • Materials
  • Measurement
  • Precipitates
  • Precipitation
  • Spectra
  • Spectrophotometers
  • Thickness

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology
  • Spectroscopy.