High Purity InP Grown by the Vapor Phase Epitaxy - Hydride Method,
Abstract
A procedure was devised for the growing of high purity InP by the vapor phase epitaxy (VPE)-hydride method. A continuous in situ each with HCl of the InP substrate and the epitaxial layer under growth was developed in the VPE-hydride reactor. A study of the effect of the continuous in situ etch of HCl on the growth rates and properties of epitaxial layers prepared by the vapor phase epitaxy-hydride technique is reported. Growth rates were determined as a function of the following variables. HCl flow rates in the mixing and source zones, PH3 flow rates, and mixing zone temperatures. Epitaxial InP structures with good morphology were obtained when the continuous HCl etch was varied between 0.8 and 1.5 cc/min. The average values (77 K) of the carrier concentrations and mobilities were 1.3 x 10 to the 15th powre/cc and 23,000 sq cm/V/sec, respectively. The study indicates that the continuous in situ HCl etch improves the quality of the epitaxial InP layers.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jun 01, 1982
- Accession Number
- ADA121687
Entities
People
- Kenneth P. Quinlan
- Thomas E. Erstfeld
Organizations
- Rome Laboratory