System to Measure Carrier Drift Velocity in Semiconductor Materials.
Abstract
A technique for measuring average drift velocity of electrons in a semiconductor is presented. A 6 GHz modulated electron beam is used to inject carriers into a reverse biased Schottky diode and the phase of the external circuit current is measured for each applied voltage. Non-uniform electric fields and parasitic impedances are accounted for. Numerical methods are used to generate a V(E) curve commensurate with measured phase-voltage data. Results for short (1.6 micron), highly doped (4 x 10 to the fifteenth power/cu cm) GaAs samples are reported.
Document Details
- Document Type
- Technical Report
- Publication Date
- Aug 01, 1982
- Accession Number
- ADA121734
Entities
People
- F. J. Rosenbaum
- G. M. Homsey
- R. E. Goldwasser
Organizations
- University of Washington