Indium-Antimonide Charge Injection Device Array.
Abstract
Indium antimonide CID infrared detector arrays have been fabricated by a planar, or non-etch back, process and their performance has been determined. Four design variations were processed using this planar structure. The best performance at an injection voltage of 2 V and an integration time of 55 microsec gave a noise level of 1000 carriers for the array alone after correcting for the preamplifier noise of 1450 carriers. The saturation charge was 2.3 x 10 to the 7th power carriers at 2 V, the lag was 6%, the cross talk was 3%, and the performance efficiency was about 65%. Dark currents were generally less than 3 nA and there was no rapid increase in dark current for injection voltages at least as large as 2.4 volts implying that larger injection voltages and well capacities are possible. The array performance demonstrated in this program fully meets the specifications of the Navy IRST program.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jun 01, 1982
- Accession Number
- ADA121822
Entities
People
- C.-y. Wei
- H. H. Woodbury
Organizations
- General Electric