Impurity Redistribution during Epitaxy and a Model of Cr in GaAs.
Abstract
This report presents a model of impurity redistribution during epitaxial growth of semiconductors due to diffusion, drift in the built-in electric field, and the growth itself. Examples show unexpected impurity profiles for the minority dopants, and indicate how undesirable conductivity regions can occur. The numerical techniques used, including iterative quasilinearization of the Shockley-Poisson equation for arbitrary doping, and dynamically adjusted time increment and mesh distances, are described. A model of Cr in GaAs, consistent with a large body of experimental data, is presented. Mechanisms explaining compensation and redistribution are proposed and estimates of some material parameters are given. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Sep 01, 1982
- Accession Number
- ADA122216
Entities
People
- C. M. Wolfe
- H. Rohdin
- M. W. Muller
Organizations
- University of Washington