Photoelectric Spectroscopy of Indium in Silicon.
Abstract
Photoelectric spectroscopy has been used to study P3/2, P1/2, and Breit-Wigner-Fano excited state transitions of indium in silicon. The photoelectric spectra were compared to absorption spectra, and measured as a function of temperature. All P3/2 and P1/2 absorption lines are resolved in photoelectric spectra, with the exception of No. 4B. This is the first observation in photoelectric spectra of lines 3 through 10, 3p', and 4p'. The temperature dependence of the spectra demonstrates that line intensities are governed by a photothermal ionization process; in particular, the activation energy of the line 4 intensity agrees with the theoretical binding energy of the excited state. Details previously observed in the Breit-Wigner-Fano spectra associated with P3/2 lines 2-10 have also been observed for the first time in the absorption spectra. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Oct 01, 1982
- Accession Number
- ADA122592
Entities
People
- Gail J. Brown
- John J. Rome
- Richard J. Harris
- Robert J. Spry
- Thomas C. Chandler
Organizations
- Wright Laboratory