Computer Modeling of Millimeter-Wave Impatt Diodes. One of a Series of Reports on Millimeter-Wave Circuit Analysis and Synthesis.

Abstract

A model of millimeter-wave Si IMPATTs has been developed which includes transient transport effects neglected in the conventional drift-diffusion model. The new model is based on principles of energy and momentum conservation. The model uses the first three velocity moments of the phase-space transport equation. Terms accounting for the effects of collisions incorporate energy dependent relaxation times and ionization rates.

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Document Details

Document Type
Technical Report
Publication Date
Nov 01, 1982
Accession Number
ADA122901

Entities

People

  • R. K. Froelich

Organizations

  • University of Michigan

Tags

Communities of Interest

  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Avalanche Diodes
  • Band Structures
  • Band Theory Of Solids
  • Boltzmann Equation
  • Computational Fluid Dynamics
  • Computational Science
  • Computer Simulations
  • Differential Equations
  • Electronics Laboratories
  • Energy Bands
  • Field Effect Transistors
  • Gunn Diodes
  • P-N Junctions
  • Physics Laboratories
  • Power Electronics
  • Semiconductor Devices
  • Semiconductors

Fields of Study

  • Physics

Readers

  • Computational Fluid Dynamics (CFD)
  • Electronics Engineering

Technology Areas

  • 5G
  • Space