The Electrical and Metallurgical Properties of Defects in Compound Semiconductors.

Abstract

This report summarizes the research carried out under Contracts DAAG 29-75-0013 and DAAG 29-78-0018. The program on the contract was directed toward the following three separate projects related to the electrical, optical, and metallurgical properties of defects in compound semiconductors.

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Document Details

Document Type
Technical Report
Publication Date
Dec 01, 1982
Accession Number
ADA122902

Entities

People

  • Gerald L. Pearson

Organizations

  • Stanford University

Tags

Communities of Interest

  • Advanced Electronics
  • Materials and Manufacturing Processes

DTIC Thesaurus Topics

  • Abstracts
  • California
  • Compound Semiconductors
  • Contracts
  • Crystals
  • Electronics
  • Electronics Laboratories
  • Electrons
  • Energy Bands
  • Heat Of Activation
  • Military Research
  • Semiconductors
  • Silicon Carbide
  • Single Crystals
  • Solid State Electronics
  • Transport Properties

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology
  • Technical Research and Report Writing.

Technology Areas

  • Microelectronics