Microwave Semiconductor Research - Materials, Devices, Circuits. GaAs Ballistic Electron Transistors Using Buried Metal Gates.

Abstract

This program covers the growth and assessment of Gallium Arsenide, and related compounds and alloys, for use in microwave, millimeter, and optical devices. It also covers the processing of the material into devices, and the testing of the devices. Both molecular beam epitaxy (MBE) and organo-metallic vapor phase epitaxy (OMVPE) are used for growth. Modulation doped heterostructures and very short gate field effect transistors are two areas covered. The following is a list of tasks pursued. (Author)

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Document Details

Document Type
Technical Report
Publication Date
Dec 01, 1982
Accession Number
ADA123299

Entities

People

  • C. E. C. Wood
  • D. W. Woodard
  • G. Wicks
  • J. Ballantyne
  • Lester F. Eastman

Organizations

  • Cornell University

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Communication Systems
  • Compound Semiconductors
  • Dielectric Waveguides
  • Electronics Laboratories
  • Field Effect Transistors
  • Frequency
  • Frequency Bands
  • Gallium Arsenides
  • Heterojunctions
  • Laser Diodes
  • Measurement
  • Microwave Integrated Circuits
  • Optical Communications
  • Power Electronics
  • Semiconductor Devices
  • Semiconductor Lasers
  • Semiconductors

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology

Technology Areas

  • Microelectronics