Capabilities and Potential of Millimeter-Wave IMPATT Devices.

Abstract

Theoretical investigations of IMPATT diodes are carried out at 30, 40, 60 and 94 GHz. GaAs, Si and InP diodes are simulated. Several single- and double-drift doping profiles are considered. Extensive results as a function of RF voltage amplitude and dc current density are presented. Taking thermal resistance into account, the expected CW performance of each structure is presented, such that the maximum allowable diode temperature is 525 deg K. Matching each device to 1-ohm circuit resistance gives an estimate of maximum obtainable pulsed power. Finally, CW and pulsed performance for all structures and materials are compared over the entire frequency range simulated. (Author)

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Document Details

Document Type
Technical Report
Publication Date
Nov 01, 1982
Accession Number
ADA123380

Entities

People

  • George I. Haddad
  • R. K. Mains

Organizations

  • University of Michigan

Tags

Communities of Interest

  • Energy and Power Technologies

DTIC Thesaurus Topics

  • 5G Wireless Networks
  • Air Force
  • Air Force Facilities
  • Computers
  • Diffusion Coefficient
  • Diodes
  • Engineering
  • Impatt Diodes
  • Michigan
  • Millimeter Waves
  • Physics
  • Physics Laboratories
  • Plastic Explosives
  • Solid State Electronics
  • Thermal Conductivity
  • Thermal Resistance
  • United States

Fields of Study

  • Materials science

Readers

  • Electrical Engineering
  • Radar Systems Engineering.
  • Semiconductor Device Technology

Technology Areas

  • 5G