Ion-Beam Deposited Films for Refractory-Metal Tunnel Junctions,

Abstract

In this paper we report on the ion-beam deposition of Nb and Ta films. The deposition of refractory metal films is of considerable interest because of their desirable superconducting and material properties. In particular, Nb has the highest Tc of the elemental superconductors and is favored for superconducting device applications because of its physical integrity. However, it is well known that pure Nb tunnel junctions characteristically exhibit non-ideal behavior which has been attributed to suboxide growth at the Nb/Nb2O5 interface. A very promising approach to ameliorating this situation is to cover the surface of the Nb film, in situ, with a thin overlayer of another metal which can 'cap' the Nb surface and form an improved tunneling oxide.

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Document Details

Document Type
Technical Report
Publication Date
Jan 01, 1982
Accession Number
ADA123462

Entities

People

  • D. E. Prober
  • D. W. Face
  • S. T. Ruggiero

Organizations

  • Yale University

Tags

Communities of Interest

  • Advanced Electronics
  • Air Platforms

DTIC Thesaurus Topics

  • Base Pressure
  • Electrodes
  • Electron Diffraction
  • Electron Microscopy
  • Electrons
  • Films
  • Ion Beams
  • Ion Sources
  • Ions
  • Low Temperature
  • Materials
  • Materials Processing
  • Metals
  • Refractory Metals
  • Thick Films
  • Thin Films
  • Transition Temperature

Fields of Study

  • Physics

Readers

  • Nanofabrication and Microfabrication.
  • Powder metallurgy of Titanium alloys.
  • Superconducting Magnet Technology