Mixed Conduction in Semi-Insulating Gallium Arsenide.

Abstract

Hall effect and conductivity measurements made on semi-insulating bulk GaAs are examined by a new approach to mixed conduction analysis. Based on Fermi level and electron mobility analyses of conductivity and Hall coefficient, it uses revised values of effective densities of states at the band edges, and electron/hole mobility ratios recently adopted by other workers. The treatment provides a visual analysis of the system in terms of the electrical parameters and impurity densities, and establishes criteria for the onset of mixed conduction. (Author)

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Document Details

Document Type
Technical Report
Publication Date
Dec 01, 1982
Accession Number
ADA123859

Entities

People

  • A. Ballato
  • H. A. Leupold
  • J. J. Winter
  • R. L. Ross

Organizations

  • United States Army Communications-Electronics Command

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Coefficients
  • Conductivity
  • Crystal Lattice Vibrations
  • Electron Mobility
  • Electronics
  • Electrons
  • Energy Bands
  • Energy Gaps
  • Equations
  • Fermi Levels
  • Gallium Arsenides
  • Hall Effect
  • Materials
  • Measurement
  • Mobility
  • Scattering
  • Semiconductors

Fields of Study

  • Materials science

Readers

  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
  • Regression Analysis.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene