Silicon Medium Power MESFET.

Abstract

We have studied the feasibility of using SOS MESFETs in the medium power microwave regime and have fabricated various devices to determine the correlation between expected and measured characteristics. The conventional silicon-on-sapphire (SOS) medium power MESFET has both a distinct advantage and disadvantage over a GaAs MESFET of similar geometry. The single crystal sapphire substrate is an excellent medium for certain microwave elements, such as microstrip lines. The disadvantage of the conventional SOS MESFET lies in the large source-gate resistance arising from the low mobility of electrons in n-type SOS films. The large source-gate resistance reduces the mutual transconductance (gm) and hence the high frequency figure of merit fT. (Author)

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Document Details

Document Type
Technical Report
Publication Date
Jan 01, 1980
Accession Number
ADA123894

Entities

People

  • Colin A. Lee
  • J. Barnard
  • J. Frey

Organizations

  • Cornell University College of Engineering

Tags

DTIC Thesaurus Topics

  • Aluminum
  • Electric Fields
  • Electrical Engineering
  • Electron Beam Lithography
  • Electron Beams
  • Energy Bands
  • Figure Of Merit
  • Films
  • Image Projectors
  • Ions
  • Medium Power
  • Oxide Films
  • Oxides
  • Photographs
  • Photolithography
  • Resistance
  • Semiconductors

Readers

  • Aerosol Science/Aerosol Physics
  • Integrated Circuit Design and Technology.
  • Systems Analysis and Design

Technology Areas

  • Microelectronics