Theoretical Studies of High Field Transport in III-V Semiconductors.
Abstract
Two theoretical aspects of high field transport in III-V semiconductors have been studied. First, a new mechanism to obtain negative differential resistance in a GaAs-AlGaAs multilayered structure is described. The mechanism is based on the transfer of electrons in real space from a high mobility GaAs region to an adjacent low mobility AlGaAs region when a high electric field is applied parallel to the interface. It is analogous in many respects to the Gunn effect, except that this mechanism allows greater control of device characteristics. These characteristics can be adjusted by varying the doping densities, the layer thicknesses, and the Al mode fraction in the AlGaAs. The mechanism is analyzed using the electron temperature model and the Monte Carlo simulation. The electron temperature model is exact in the high carrier density limit, whereas the Monte Carlo method is valid in the low density limit. Both methods clearly illustrate the degree of control possible with this mechanism over device characteristics. Comparisons are made between the two models. Miscellaneous effects which are neglected in the models are discussed. These include two-dimensional effects, band bending, statistical fluctuation, and quantum mechanical transmission at the interface.
Document Details
- Document Type
- Technical Report
- Publication Date
- Sep 01, 1980
- Accession Number
- ADA123947
Entities
People
- Hisashi Shichijo
Organizations
- University of Illinois Urbana–Champaign