Large Plate CdTe Synthesis by Sealed Vessel Transport

Abstract

Previously, in Technical Report 3, the decision to change to a vapor- melt process involving a three chambered system was reported. Results of 10 attempts to grow 6-in. plates from Stoichiometric melts are reported. In all cases, a void region occurs between the faces of the plate. To solve this problem, solution growth was selected over stoichiometric growth. A solid whole grain structure was obtained. The method was applied to growth of 8-in. plates but some difficulty was experienced. Analytical results of material grown in the vapor-melt process have demonstrated purity improvement. The AMTIR approach as applied promises to meet all program goals. Continuation of the effort to grow 8-in. and 10-in. diameter plates is recommended.

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Document Details

Document Type
Technical Report
Publication Date
Jan 01, 1983
Accession Number
ADA124035

Entities

People

  • A. R. Hilton

Tags

Communities of Interest

  • Advanced Electronics
  • Ground and Sea Platforms

DTIC Thesaurus Topics

  • Amorphous Materials
  • Boundaries
  • Crystal Growth
  • Crystals
  • Diagrams
  • Elements
  • Grain Growth
  • Grain Size
  • Heat Energy
  • High Temperature
  • Materials
  • Melting Point
  • Optical Materials
  • Phase Diagrams
  • Sealed Systems
  • Transition Temperature
  • Vapor Pressure

Readers

  • Computational Modeling and Simulation
  • Thin Film Deposition Science.
  • ballistics.