Growth of HgCdTe by Modified Molecular Beam Epitaxy
Abstract
The LADA Technique has been used to grow thin films of HgCdTe, CdTe, and ZnO films on various substrates. Single crystalline Hg(0.7)Cd(0.3)Te films of up to 15 microns thick were deposited on (111) CdTe substrates. Their electrical properties can be improved or altered by post-annealing in Hg over pressure. After annealing at 410 C, the films were successfully converted to p- type. Ion implanted n(+)/p photodiodes were demonstrated. Heteroepitaxial layers of (111) CdTe with excellent surface morphology were grown on (100) GaAs substrates. Near the interface region, there is a high density of misfit dislocations. However, the crystalline quality improves abruptly at approximately 2 microns from the interface. Dislocation density was determined by TEM analysis. At 6 microns from the interface, it is as low as 100,000/sq cm. ZnO films were dposited on a large variety of substrates. The growth condition and mechanism were studied in detail as the function of substrate temperature, ambient condition, annealing condition, and doping. Films with good uniformity and smooth morphology were obtained. They are uniaxially oriented in the (0002) direction and have very high resistivity.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jan 03, 1983
- Accession Number
- ADA124057
Entities
People
- H. Sankur
- J. T. Cheung