Total Dose and Transient Radiation Testing of Two CMOS/SOS RAM's

Abstract

Total dose and transient radiation measurements were performed in situ on two complementary metal-oxide semiconductor/silicon on sapphire (CMOS/ SOS) random-access memories (RAM's). Total-dose failure levels were determined using a Co 60 isotope source. Upset levels were determined at both a flash x-ray facility and a linear accelerator. The two RAM's are configured as 256 x 4 and 1k x 1 and are equivalent to types 6551 and 6518, respectively.

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Document Details

Document Type
Technical Report
Publication Date
Dec 01, 1982
Accession Number
ADA124125

Entities

People

  • Charles T. Self

Organizations

  • Harry Diamond Laboratories

Tags

DTIC Thesaurus Topics

  • Communication Systems
  • Comparators
  • Complementary Metal-Oxide Semiconductors
  • Dose Rate
  • Instrumentation
  • Linear Accelerators
  • Metal Oxide Semiconductors
  • Metal Oxides
  • Military Research
  • Power Supplies
  • Pulse Transformers
  • Radiation
  • Recovery
  • Semiconductors
  • X Rays

Fields of Study

  • Physics

Readers

  • Integrated Circuit Design and Technology.
  • Solar Physics

Technology Areas

  • Microelectronics