Chemical Deposition of TiO2 Layers on GaAs.
Abstract
Ti02 layers have been produced on clean, etched GaAs by a chemical deposition technique in which a GaAs coupon is immersed in a nonaqueous solution of a titanium alkoxide and then removed to allow the alkoxide layer adhering to the surface to hydrolyze to Ti02. Depth profiles of the films have been measured by x-ray photoelectron spectroscopy and the scanning Auger microprobe, using both ion-beam sputter etching and chemical solution etching. The results indicate that the composition and chemical structure of the films are determined by the amount of water present in the coating solution, coating atmosphere, and hydrolysis atmosphere. Films grown in high humidity exhibit much intermixing of semiconductor and oxide components, and oxidation of the semiconductor; films grown in low humidity exhibit neither mixing nor oxidation of GaAs unless they are stored in that atmosphere for a prolonged period.
Document Details
- Document Type
- Technical Report
- Publication Date
- Dec 21, 1982
- Accession Number
- ADA124281
Entities
People
- P. A. Bertrand
- P. D. Fleischauer
Organizations
- The Aerospace Corporation