Determination of Al in GA(1-x)Al(x)As by Auger Spectroscopy, Ion Microprobe Mass Analysis, and Photoluminescence.
Abstract
Single layers of Ga (1-x)A1(x)As were grown on semi-insulating Cr-doped GaAs substrates by liquid phase epitaxy. The samples consisted of six series. Within each series, the mole fraction of Al ranged from 0 to 0.45. Each series was either doped p with Ge or n with Te. The doping levels ranged from 10 to the 15th power to 10 to the 19th power carriers/cc. The mole fraction of Al in ech sample was measured independently by Auger electron spectroscopy, ion microprobe mass analysis, and photoluminescence for comparison with phase diagram predictions. The carrier concentrations were estimated by the half-width of the photoluminescence peaks. The techniques, and their discrepancies and agreements, are discussed.
Document Details
- Document Type
- Technical Report
- Publication Date
- Dec 06, 1982
- Accession Number
- ADA124300
Entities
People
- D. G. Heflinger
- G. A. Evans
- N. Marquez
- S. I. Boldish
- T. S. Stewart
Organizations
- The Aerospace Corporation