Noise and Thermal Contributions in Transferred Electron Two and Three Terminal Devices.

Abstract

A description of recent studies on noise in two and three terminal compound semiconductor devices, as well as numerical studies of GaAs FET Y parameters is given. Studies of thermal effects and space charge limited FET behavior in compound semiconductors is briefly described. (Author)

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Document Details

Document Type
Technical Report
Publication Date
Jan 21, 1983
Accession Number
ADA124326

Entities

People

  • H. L. Grubin
  • J. P. Kreskovsky

Tags

DTIC Thesaurus Topics

  • Boltzmann Equation
  • Charge Density
  • Compound Semiconductors
  • Current Density
  • Electric Fields
  • Electronics
  • Field Effect Transistors
  • Gunn Diodes
  • Plastic Explosives
  • Semiconductor Devices
  • Semiconductors
  • Solid State Electronics
  • Stratified Fluids
  • Temperature Gradients
  • Thermal Conductivity
  • Transistors
  • Two Dimensional

Fields of Study

  • Materials science

Readers

  • Integrated Circuit Design and Technology.
  • Systems Analysis and Design

Technology Areas

  • Microelectronics
  • Space