Encapsulation and Implantation Studies of InP.
Abstract
Successful ion implantation of InP will depend on detailed information regarding the protective qualities of prospective encapsulants and also the thermal annealing parameters (i.e., time and temperature) required to reorder the implant damaged lattice and to activate the implanted impurity. Using Auger electron spectroscopy (AES), secondary ion mass spectrometry (SIMS), and low temperature photoluminescence (PL) the InP encapsulation properties of CVD Si02, CVD PSG (phosphosilicate glass), and rf plasma-deposited Si3N4 have been examined. In addition, the annealing/implantation characteristics of semi-insulating (SI) InP implanted with 4He and 9Be have been studied using PL and SIMS. Following 60 min, 750 C anneals, indium is detected on the surfaces of Si3N4 encapsulant layers by both AES and SIMS. SIMS results also suggest that indium may outdiffuse through PSG caps during similar anneals. Indiffusion of Si from the cap to the underlying InP is found to be significant in annealed Si02 and Si3N4 capped samples. Little such Si contamination is observed after annealing InP with PSG encapsulants. PL measurements indicate that the spectral features and luminosity levels of capped and annealed InP are least altered by PSG encapsulants. From these results it is concluded that PSG encapsulation best preserves the initial characteristics of encapsulated InP during furnace anneals.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jul 01, 1982
- Accession Number
- ADA124388
Entities
People
- John David Oberstar
Organizations
- University of Illinois Urbana–Champaign