Swept Line Electron Beam Annealing of Ion Implanted Semiconductors.
Abstract
The capabilities of a Swept Line Electron Beam (SLEB) in annealing ion-implanted semiconductors are examined. This technique employs a fixed geometry, line-shaped electron beam through which implanted samples are mechanically scanned. In general, this technique can produce annealing results comparable or superior to those achievable by conventional furnace annealing. Residual point defects in self-implanted amorphous silicon treated by SLEB and furnace processes are examined by Deep Level Transient Spectroscopy.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jul 01, 1982
- Accession Number
- ADA124428
Entities
People
- Kenneth James Soda
Organizations
- University of Illinois Urbana–Champaign