Laser Annealing of Ion Implanted Silicon.
Abstract
We present here a detailed theoretical and experimental investigation of the dynamics of surface melting and regrowth and electrical activation of Si+ and BF(+2) ion implanted amorphized silicon annealed with a Q-switched Nd:glass laser (lambda = 1.06 microns). In the theoretical calculations we have used the technique of finite difference equations to solve the one-dimensional heat conduction equations for the solid and liquid phases. We have taken into account the temperature dependence of all the parameters involved to give us a realistic model. The melting model is supported by time resolved reflectivity measurements using a He-Ne and an Ar laser. We use SEM to investigate the electron channeling pattern to study the quality of crystalline regrowth. For BF(+2) implanted silicon, the boron and fluorine atomic profiles are measured by secondary ion mass spectrometry (SIMS) on as-implanted samples as well as laser annealed samples. The impurity redistribution is explained on the basis of the melting model.
Document Details
- Document Type
- Technical Report
- Publication Date
- Aug 01, 1981
- Accession Number
- ADA124465
Entities
People
- Anjan Bhattacharyya
Organizations
- University of Illinois Urbana–Champaign