Ion Implantation Defects in Silicon and the Performance of Micron and Submicron Devices.
Abstract
We report investigations of hot electron effects in heterojunction layers, studies of laser annealing and ion implantation, and a general study of electronic transport in small devices.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jan 31, 1983
- Accession Number
- ADA124497
Entities
People
- B. G. Streetman
- K. Hess
Organizations
- University of Illinois Urbana–Champaign