Reading and Writing of Photochemical Holes Using GaA1As Diode Lasers.
Abstract
A current tuned (gallium aluminum arsenide) diode laser is utilized both to burn and to detect narrow photochemical holes in the inhomogeneously broadened 833 nm zero phonon line of the R' color center in LiF. Applications for reading and writing data into frequency domain optical memories based on photochemical hole burning are discussed. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Feb 07, 1983
- Accession Number
- ADA124633
Entities
People
- F. Chu
- G. C. Bjorklund
- P. Pokrowsky
- W. E. Moerner
Organizations
- International Business Machines Corporation (Armonk, NY)