Electrical Properties of Silicon-Implanted GaAs.
Abstract
A comprehensive study of the electrical properties of low-dose Si implants in both Cr-doped and undoped GaAs substrates has been made using the Hall-effect/sheet-resistivity measurement technique for various ion doses, ion energies, and annealing temperatures. The samples were implanted at room temperature and annealed with silicon nitride encapsulants in a hydrogen atmosphere for 15 minutes. N-type layers were produced at all dose levels investigated, and the optimum annealing temperature was 850 C for all doses. The highest electrical activation efficiencies obtained were 89% and 87% for Cr-doped and undoped GaAs substrates, respectively. The electrical activations and mobilities of undoped GaAs are, in general, higher than those of Cr-doped GaAs at all annealing temperatures for a given dose. The electrical activations and mobilities also depend upon the ion energy increasing with ion energy.
Document Details
- Document Type
- Technical Report
- Publication Date
- Dec 01, 1982
- Accession Number
- ADA124675
Entities
People
- Yong Yun Kim
Organizations
- Air Force Institute of Technology