Effects of Conduction Band Anisotropy on the Exciton-Plasma Mott Transition in Indirect Gap Semiconductors.
Abstract
A theory is developed for the incorporation of conduction band anisotropy into the analysis of the exciton-plasma Mott transition in indirect gap semiconductors. Ellipsoidal energy surfaces are assumed for the electrons while spherical energy surfaces are retained for holes. Static electron-hole screening in the random phase approximation is assumed. The Mott transition is associated with the electron-hole pair density at which the exciton binding energy in the assumed potential is zero. The binding energy is computed variationally. It is found that the electron anisotropy causes the Mott transition to shift to higher densities. It is also found that, in the absence of screening, the exciton binding energy is not significantly affected by the electron anisotropy. It is thus concluded that the shift to higher densities is due largely to the reduced ability of anisotropic electrons to screen. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Dec 01, 1982
- Accession Number
- ADA124687
Entities
People
- Barry Scott Davies
Organizations
- Air Force Institute of Technology