Study of Ohmic Contacts on Si(28) - Implanted GaAs.
Abstract
A study of fabricating a low resistant contact on Si(28) - implanted n-type GaAs was conducted. Ion doses of 1 x 10 to the 13th power/sq. cm to 1 x 10 to the 15th power/sq. cm and annealing temperatures of 700 C to 900 C were tested in order to achieve the lowest specific contact resistivity. Experimental results show that a low specific contact resistivity of 2.78 x 10 to the 7th power ohm/sq. cm can be obtained on GaAs layers which have been formed by Si(28) (3 x 10 to the 14th power/sq. cm) implantation in undoped semi-insulating GaAs annealed at 850 C using an oxygen-free chemical vapor deposited Si3N4 layer as an encapsulant followed by subsequent deposition of AuGe/Ni ohmic contacts. Recommendations are discussed concerning further studies and a design for a new contact test pattern which would improve the degree of accuracy of resistivity measurements.
Document Details
- Document Type
- Technical Report
- Publication Date
- Dec 01, 1982
- Accession Number
- ADA124689
Entities
People
- Diane M. Fischer
Organizations
- Air Force Institute of Technology